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    DSA00364370.pdf by Hitachi Semiconductor

    • 2SJ574 Silicon P Channel MOS FET High Speed Switching ADE-208-739B (Z) 3rd.Edition. June 1999 Features ยท Low on-resistance R DS = 1.1 typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 typ. (VGS
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