DSA00364367.pdf by Hitachi Semiconductor

Partial File Text 4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition Feb. 1999 Features · Low on-resistance N Channel : R DS(on) 0.5 , VGS = 10V, ID = 2.5A R DS(on) 0.6 ,
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Pb Free Unknown
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4AK19 ADE-208-727 SP-10