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DSA00364330.pdf
by Hitachi Semiconductor
Partial File Text
2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A (Z) 2nd. Edition Jul. 1998 Features · Low on-resistance R DS(on) = 0.017 typ. · Low drive current. · 4V gate drive
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Original
RoHS
No
Pb Free
Unknown
Lifecycle
Transferred
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2SJ555
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