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DSA00364263.pdf
by Hitachi Semiconductor
Partial File Text
3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472B (Z) 3rd. Edition Mar. 2001 Features · Capable of low voltage operation (VDS = 1.5 to 3 V) · Excellent low noise characte
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3SK309
ADE-208-472B