DSA2IH00205974.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Chip Form) Features · High power - P idB = 33.5 dBm at f = 8 GHz · High gain - G idB = 5.5 dB at f = 8 GHz · Suitable for C-Band am plifier · Ion i
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