Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSA2IH00205971.pdf by Not Available

    • TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Chip Form) Features · High power - P idB = 29.5 dBm at f = 8 GHz · High gain - G 1dB = 7.5 dB at f = 8 GHz · Suitable for C-Band am plifier · Ion i
    • Scan
    • Unknown
    • Unknown
    • Obsolete

    DSA2IH00205971.pdf preview

    Price & Stock Powered by
    Supplyframe Tracking Pixel