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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Chip Form) Features · High power - P idB = 29.5 dBm at f = 8 GHz · High gain - G 1dB = 7.5 dB at f = 8 GHz · Suitable for C-Band am plifier · Ion i
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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