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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · M edium pow er - P idB = 21 dBm at f = 8 GHz · High gain - G idB = 9 dB at f = 8 GHz · Suitable for C-Band am plifier · Ion im
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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