DSA2IH00205879.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROW AVE POWER GaAs FET TECHNICAL DATA FEATURES: H IG H POWER PldB= 2 4 d B m H IG H GAIN G1 d B = 8 dB at f = 15 GHz at f = 15 GHz JS8851-AS S
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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