This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
M ICRO W AVE SEM ICO NDUCTO R
M ICRO W AVE POWER
GaAs FET
TECHNICAL DATA
F EA TURES:
HIGH POWER PldB = 33.5 dBm at f = 8 GHz HIGH GAIN G^jg = 5.5 dB at f = 8 GHz i i
JS8838A-A
Findchips