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DSA2IH00205864.pdf
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TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. H N 1 D02FU unit of cathode common. : Vjr (3) = 0.90V (Typ.) : trr = 1.6ns (Typ.) : CT =
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