DSA00362337.pdf by Toshiba

Partial File Text GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N - CHANNEL MOS TYPE GT80J101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf = 0.40µs (Max.)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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