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DSA00362320.pdf
Manufacturer
Toshiba
Partial File Text
GT25G101(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V
Datasheet Type
Original
ECAD Model
Part Details
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gt25g101