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    DSAEDA000115608.pdf by International Rectifier

    • PD -97156 IRFH5302PbF HEXFET® Power MOSFET VDS RDS(on) max 30 2.1 Qg (typical) RG (typical) ID mΩ 29 1.6 (@VGS = 10V) V nC Ω 100 (@Tc(Bottom) = 25° C) h
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