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    DSA2IH00203072.pdf

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    • SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3419 M E D IU M PO W ER AMPLIFIER APPLICATIONS. · · · Low Saturation Voltage : VCE (sat) = 0-25V (Typ.) (Ic = 500mA, lB = 50mA) High Collector P
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