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Partial File Text GT20D101 HIGH POWER AMPLIFIER APPLICATION . High Breakdown Voltage SILICON N CHANNEL IGBT Unit in mm : Vc£g=250V (MIN.) 20 5 MAX # 3.3 ±0.2 . High Forward Transfer Admittance : | Yfe |
Datasheet Type Scan
RoHS No
Pb Free Unknown
Lifecycle Obsolete

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