This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL TYPE
P T ^ n n ^ fM
GT20D201
HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage : VcES=~250V (MIN.)
. High For
