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DSA2IH00201866.pdf
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SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV186 UHF SHF T U N IN G FEATURES : · High Capacitance Ratio : C2V/C25V = 5.2 (Typ.) · Low Series Resistance : rs = 1.2ÎÎ (Typ.) · Ex
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1SV186
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