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DSA00246747.pdf
Manufacturer
TwinMOS Technologies
Partial File Text
M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bit
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ECAD Model
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User Tagged Keywords
1M x 16Bit x 4 Banks Synchronous DRAM
54PIN
TBS6416B4E
TBS6416B4E-7
TBS6416B4E-7G
TwinMOS