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    DSA00246747.pdf

    • TwinMOS Technologies
    • M.tec TBS6416B4E 1M x 16Bit x 4 Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bit
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    1M x 16Bit x 4 Banks Synchronous DRAM 54PIN TBS6416B4E TBS6416B4E-7 TBS6416B4E-7G TwinMOS
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