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    DSAZIHA100025589.pdf by American Microsemiconductor

    • GSRU10035 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)350è V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50
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