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    DSAZIHA100025537.pdf by American Microsemiconductor

    • ECG321 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)700 V(BR)CBO (V)1.6k I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (
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