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    DSAZIHA100025502.pdf

    • American Microsemiconductor
    • DTG1110 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)200º V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)106 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)15m÷
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