DSA00323951.pdf by Infineon Technologies

Partial File Text IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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