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    DSA00323951.pdf

    • Infineon Technologies
    • IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C
    • Original

    DSA00323951.pdf preview Download Datasheet

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