DSA0076693.pdf by Toshiba

Partial File Text TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz · High gain - G1dB = 7.5 dB at 8.5 GH
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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