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TOSHIBA
TIM8596-2
MICROWAVE POWER GaAs FET
Internally Matched Power GaAs FETs (X, Ku-Band)
Features
· High power
- P1dB = 33.5 dBm at 8.5 GHz to 9.6 GHz
· High gain
- G1dB = 7.5 dB at 8.5 GH
