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DSA0076660.pdf
by IXYS
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DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 1000 VDGR TJ = 25°C to 150
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"RF MOSFETs"
DE375-102N10A
nec 2401