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    DSAZIHA100025156.pdf by American Microsemiconductor

    • 2SD884 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)200 V(BR)CBO (V)330 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CB
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