DSAZIHA100024549.pdf
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American Microsemiconductor
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2N6325 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)300
V(BR)CBO (V)400
I(C) Max. (A)30
Absolute Max. Power Diss. (W)200#
Maximum Operating Temp (øC)200õ
I(CBO) Max. (A)5.0m°
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Original
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