DSA00321853.pdf by Infineon Technologies
- IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C
- Original
- Unknown
- Unknown
- Unknown
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