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    DSAZIHA100024421.pdf by American Microsemiconductor

    • 2N5696 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)40 Absolute Max. Power Diss. (W)120# Maximum Operating Temp (øC)110õ I(CBO) Max. (A)10m÷
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