DSAUD0057041.pdf by Toshiba

Partial File Text MICROWAVE POWER GaN HEMT TGI8596-50 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES HIGH POWER Pout=47.0dBm at Pin=41.0dBm HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz BROA
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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41dBm TGI8596-50 TOSHIBA HEMT