DSAIHSC000104822.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs (C-Band) Features â¢ High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz â¢ High gain - G1dB = 5.5 dB at 7.7
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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