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DSAIHSC000104747.pdf
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TOSHIBA TIM5964-30LA MICROWAVE POWER GaAs FET Features ⢠Low intermodulation distortion - IM3 = -45 dBc at Po = -34.5 dBm, - Single carrier level ⢠High power - PidB = 45 dBm at 5.9 GHz
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