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DSAIHSC000104732.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM6472-30SL Features ⢠Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ⢠High power - PldB = 45 dBm at 6.4 GHz to
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