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DSAIHSC000104262.pdf
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TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs (Chip Form) Features ⢠High power - P idB = 32 dBm at f = 8 GHz ⢠High gain - G1dB = 7 dB at f = 8 GHz ⢠Suitable for C-B
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ECAD Model
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