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    DSAIHSC000104262.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs (Chip Form) Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G1dB = 7 dB at f = 8 GHz • Suitable for C-B
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