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TOSHIBA
MICROWAVE POWER GaAs FET
JS8850A-AS
Power GaAs FETs (Chip Form)
Features
⢠High power
- P-idB = 21.5 dBm at f = 15 GHz
⢠High gain
- G1dB = 9 d B a t f = 15 GHz
⢠Suitable f