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DSAIHSC000104258.pdf
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TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs (Chip Form) Features ⢠High power - P1dB = 28 dBm at f = 15 GHz ⢠High gain - G1de = 7 d B a t f = 15 GHz ⢠Suitable for K
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ECAD Model
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