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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs (Packaged) Features â¢ High power - P 1dB = 24 dBm at f = 8 GHz â¢ High gain - G-,dB = 8 dB at f = 8 GHz â¢ Suitable for C-Band
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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