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DSAIHSC000104233.pdf
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TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs (Chip Form) Features â¢H ig h power - Pld B = 29.5 dBm at f = 8 GHz ⢠High gain - G-|dB = 7.5 dB at f = 8 GHz ⢠Suitable for C
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ECAD Model
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