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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs (Chip Form) Features â¢ High power - PidB = 29.5 dBm at f = 8 GHz â¢ High gain - G 1dB = 7.5 dB at f = 8 GHz â¢ Suitable for C
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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