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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs (Chip Form) Features â¢ High power - P-idB = 33.5 dBm at f = 8 GHz â¢ High gain - G 1dB = 5.5 dB at f = 8 GHz â¢ Suitable for
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Active

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