DSAUD0055751.pdf by Cree

Partial File Text PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree's CGH40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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470PF CGH4003 CGH40035 CGH40035-TB CGH40035F CGH40035F-TB CGH40035FE CGH40045F