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SILICON EPITAXIAL PLANAR TYPE
HN1D03FU
U nit in mm
2.1 ± 0.1 1.25 ± 0.1
to Ö »n IO o r-fc fc 1 2 - R
ULTRA HIGH SPEED SW ITCHING APP LIC A TIO N .
·
Built in Anode Common and Cathode Co
