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    DSA2IH0044796.pdf

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    • ELECTRONIC DESIGNS INC. * ^EDI strate. _________ EDI8F8512C High Speed Four Megabit SRAM Module Features 512Kx8 bit CMOS Static Random Access Memory · Access Times 20 thru 100ns · Data Retent
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    28Kx8 EDI8F8512C85B6C

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