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    DSAZIHA100022248.pdf by American Microsemiconductor

    • IRFF310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)1.25 I(DM) Max. (A) Pulsed I(D)800m @Temp (øC)100# IDM Max (@25øC Amb)5.5 @Pu
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