DSA00120947.pdf by International Rectifier

Partial File Text PD - 9.1369B IRLI3705N HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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Equivalent IRF 44 IRF 870 IRL3705N IRLI3705N

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