DSA00120917.pdf by International Rectifier

Partial File Text PD - 9.1489A IRFIZ34N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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IRFIZ34N IRFZ34N MOSFET 150 N IRF